Implementation of nitride oxidation in the 2D process simulator IMPACT-4

Author

Tixier, A. ; Senez, Vincent ; Baccus, B. ; Marmiroli, A.

Author_Institution

IEMN/ISEN, Villeneuve d´´Ascq, France

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

33

Lastpage

34

Abstract

To shrink the dimension of devices, new isolation technologies, with respect to classical LOCOS, have to be evaluated. This paper deals with the study of one of these possible alternatives: the LOCOS/Recessed-LOCOS NCLAD structure. In this process a thin nitride layer encapsulates the oxide-nitride stack to prevent the formation of long bird\´s beak. The efficiency of this technique is dependent on the nitride oxidation. In order to study this process, via simulation, it is therefore necessary to model nitride oxidation: a "modified Deal and Grove" model has been implemented and calibrated in the 2D Process simulator IMPACT-4. The implementation problems and relative solutions are described.

Keywords

isolation technology; oxidation; semiconductor process modelling; 2D process simulator; Deal and Grove model; IMPACT-4; LOCOS/Recessed-LOCOS NCLAD structure; bird´s beak; encapsulation; isolation technology; nitride oxidation; oxide-nitride stack; Calibration; Microelectronics; Numerical simulation; Oxidation; Research and development; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865260

Filename

865260