An interpolation technique for the numerical solution of the rate equations in extended defect simulation

Extended defects play an important role in the diffusion and electrical activation of dopants in silicon. All extended defects have been observed to have a range of sizes. The evolution of the size distribution can be calculated through a series of discrete rate equations. Since the extended defects can contain millions of atoms, the number of rate equations can become so large that it will be impossible to solve all of them. In this paper, we compare three different methods of reducing the number of equations for extended defect simulation: Linear interpolation, exponential interpolation, and linear rediscretization.