Investigation of silicon NC memory with improved threshold voltage window

Memory capacitors with the structure of thin tunneling oxide layer/silicon nanocrystal (NC) layer/thick controlling oxide layer were fabricated by both LPCVD method and low energy ion implantation method. The silicon NC formation condition, its size and density which have great influence on silicon NC memory characteristics are experimentally investigated in this paper. Silicon NC memory with a 2V threshold voltage window was obtained by optimized silicon ion implantation technology, which is beneficial to the practical application of the silicon NC memory device.