• DocumentCode
    2367633
  • Title

    Effect of channel length on NBTI in sub-100nm CMOS technology

  • Author

    Jin, Lei ; Xu, Mingzhen

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    597
  • Lastpage
    600
  • Abstract
    The channel length dependence of NBTI degradation in a sub-100 nm CMOS technology is studied. It is shown that the enhanced interface trap generation near the gate edge is primarily responsible for the channel length dependence of NBTI degradation. The possible contribution of oxide charges, although may not be ruled out, plays a less important role.
  • Keywords
    CMOS integrated circuits; integrated circuit reliability; interface states; CMOS technology; channel length; enhanced interface trap generation; negative bias temperature instability; oxide charges; CMOS technology; Nanoelectronics; Niobium compounds; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585558
  • Filename
    4585558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367633