Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

Author

Angelini, Elsa ; Camarchia, Vittorio ; Cappelluti, F. ; Guerrieri, S. Donati ; Pirola, Marco ; Bonani, Fabrizio ; Serino, A. ; Ghione, G.

Author_Institution

Dipt. di Elettronica, Politecnico di Torino

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates, relying on an electro-thermal model validated against DC, pulsed DC and S-parameter measurements. The measured devices are backside mounted, but the layout is also conceived for flip-chip mounting. Based on accurate estimation of the device thermal resistance, the model enables to explore and assess the device performances in both backside and flip-chip configurations; results are shown both for conventional ceramic AlN flip-chip mountings, and for advanced (diamond) heat sinks

Keywords

III-V semiconductors; aluminium compounds; ceramics; flip-chip devices; gallium compounds; heat sinks; high electron mobility transistors; semiconductor device measurement; semiconductor device models; semiconductor device packaging; silicon compounds; wide band gap semiconductors; AlN; GaN; HEMT technology development; backside configurations; device thermal resistance; diamond heat sinks; electro-thermal model; flip-chip configurations; flip-chip mounting; semiconductor device thermal factors; Ceramics; Electrical resistance measurement; Gallium nitride; HEMTs; Heat sinks; Pulse measurements; Resistance heating; Scattering parameters; Silicon carbide; Thermal resistance; Electro-thermal effects; GaN; Power RF FETs; Semiconductor device thermal factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666082

Filename

1666082