Title :
Impact of DIBL variability on SRAM static noise margin analyzed by DMA SRAM TEG
Author :
Song, X. ; Suzuki, M. ; Saraya, T. ; Nishida, A. ; Tsunomura, T. ; Kamohara, S. ; Takeuchi, K. ; Inaba, S. ; Mogami, T. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
The static noise margin (SNM) as well as Vth, gm, body factor, and drain-induced-barrier-lowering (DIBL) in individual transistors in SRAM cells are directly measured by 16k bit device-matrix-array (DMA) SRAM TEG. It is found that, besides Vth variability, DIBL variability degrades SRAM stability and its Vdd dependence while the variability of gm and body factor has only a small effect.
Keywords :
SRAM chips; transistors; DIBL variability; DMA SRAM TEG; SNM; SRAM stability; device-matrix-array; drain-induced-barrier-lowering; static noise margin; transistor;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703290
