A new comprehensive and experimentally verified electron transport model for strained SiGe

The favorable properties of Si/SiGe heterojunction bipolar transistors (HBTs) for applications in the GHz range and the possibility to integrate these devices together with silicon CMOS circuitry on one chip will lead to a replacement of GaAs based components by SiGe based parts for many high frequency applications in near future. Hence there is an increasing demand for an accurate modeling of carrier transport in strained SiGe. But despite this apparent importance all electron transport models for strained SiGe published so far are of limited generality (e.g. neglect nonparabolicity and the influence of Ge on phonon scattering) and are not verified experimentally by measurements of ohmic mobility in strained SiGe layers. This paper aims at closing this gap.