4.5 kV 120A SICGT and Its PWM Three Phase Inverter Operation of 100kVA class

Author

Sugawara, Y. ; Miyanagi, Y. ; Asano, K. ; Agarwal, A. ; Ryu, S. ; Palmour, J. ; Shoji, Y. ; Okada, S. ; Ogata, S. ; Izumi, T.

Author_Institution

Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

4.5 kV 120 A SICGT with a chip size of 8 mm times 8 mm and a new high heat resistive resin capable of 400 degC operations were developed. The SICGT coated with the resin has a low leakage current of less than 5 times 10⁶ A/cm² at both 4.5 kV and 250 degC, a low VF of 5.0 V at 120 A, and short turn-on and turn-off times of 0.3 mus and 1.7 mus respectively. A SICGT module was built by mounting one SICGT and two 6mm times 6mm SiC pn diodes in a metal can package, and a 110 kVA PWM 3 phase inverter was developed by using six of the SICGT modules. The electric power capabilities of both the developed SICGT and the 3 phase inverter are the largest ones among the reported SiC switching devices and SiC inverters, respectively

Keywords

PWM invertors; silicon compounds; thyristor applications; thyristors; wide band gap semiconductors; 0.3 mus; 1.7 mus; 120 A; 250 C; 4.5 kV; 400 C; 5.0 V; 6 mm; 8 mm; PWM; SICGT; SiC; electric power capabilities; heat resistive resin; leakage current; metal can package; pn diodes; switching devices; three phase inverter; Anodes; Diodes; Electrodes; Packaging; Pulse width modulation; Pulse width modulation inverters; Resins; Silicon carbide; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666086

Filename

1666086