• DocumentCode
    2367830
  • Title

    Gain and noise characteristics of single-mode Er3+/Yb3+ Co-doped phosphate glass fibers

  • Author

    XU, S.H. ; Yang, Z.M. ; Feng, Z.M. ; Zhang, Q.Y. ; Jiang, Z.H. ; Xu, W.C.

  • Author_Institution
    Key Lab. of Specially Functional Mater. of Minist. of Educ. & Inst. of Opt. Commun. Mater., South China Univ. of Technol., Guangzhou
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    Single-mode highly Er3+/Yb3+ co-doped phosphate glass-fiber has been fabricated by rod-in-tube technique. Gain and noise measurements of the phosphate glass fiber have been performed by dual-pump configure with two 976 nm fiber-pigtail LDs using a highly Er3+/Yb3+ co-doped phosphate fiber with a length of 5.0 cm. Gain spectra and noise figures with different input signal powers of -30, -10, and -1 dBm have been investigated when the signal wavelength was tuned from 1525 to 1565 nm. A peak net gain of 16.5 dB at 1534 nm with a -30 dBm input signal from a micro erbium-doped fiber amplifier (EDFA) based on the 5.0-cm-long phosphate fiber has been achieved, that is, a net gain coefficient as high as 3.3 dB/cm, which is to the best of our knowledge, the highest from this kind of fiber amplifiers reported to-date. At the -30, -10, and -1 dBm input signal levels, less than 8.0 dB noise figures over the whole C-band have been obtained.
  • Keywords
    erbium; optical fibre losses; optical fibre testing; optical glass; optical noise; optical pumping; phosphate glasses; ytterbium; C-band; EDFA; P2O5:Er,Yb; dual-pump configure; erbium-doped fiber amplifier; fiber gain measurement; fiber gain spectra; fiber noise figures; fiber noise measurement; fiber-pigtail LD; gain coefficient; microamplifier; optical propagation loss coefficients; rod-in-tube fabrication; single-mode Er3+-Yb3+ codoped phosphate glass fiber; size 5.0 cm; wavelength 1525 nm to 1565 nm; Erbium; Nanoelectronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585566
  • Filename
    4585566