Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

Author

Jungemann, Chr ; Decker, Stefan ; Thoma, R. ; Eng, W.L. ; Goto, H.

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

65

Lastpage

66

Abstract

In this abstract we describe a new Multiple Refresh (MR) technique for Monte Carlo (MC) device simulation which is an improved version of a method developed for bulk simulations. The purpose of this method is to enhance statistics of rare events (e.g. impact ionisation, oxide injection) without increasing the number of common events (i.e. low energetic particles). The MR technique allows to control directly the stochastic noise of the MC simulation in predefined regions of phase space by maintaining a given number of particles in these regions. We apply the method to an LDD-NMOSFET.

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; LDD-NMOSFET; Monte Carlo device simulation; impact ionisation; oxide injection; phase space multiple refresh; statistical enhancement; stochastic noise; Impact ionization; Monte Carlo methods; Neodymium; Noise reduction; Phase noise; Poisson equations; Postal services; Semiconductor device noise; Statistics; Stochastic resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865276

Filename

865276