Title :
Dimensional reduction effect on momentum of carrier electrons in nanoscale silicon materials
Author :
Nakamura, Kentaro
Author_Institution :
Center for the Promotion of Interdiscipl. Educ. & Res., Kyoto Univ., Kyoto, Japan
Abstract :
The momenta of carrier electrons in three-dimensional bulk silicon and low-dimensional silicon nano-structures have been analyzed by means of first-principles Kohn-Sham orbitals. Quantum-mechanical expectation values of the momentum of electrons in the conduction band have been calculated with respect to k coordinate, and the dimensional confinement has been discussed based on the behavior of the momentum. The conduction-band structure of silicon(001) nanosheet with about 5 nm thickness traces back to the multivalley one of bulk silicon in terms of the momentum state, while the momentum state for less than 2 nm cannot connect with that of bulk silicon.
Keywords :
ab initio calculations; conduction bands; density functional theory; elemental semiconductors; nanostructured materials; quantum theory; silicon; 3D bulk silicon; Si; carrier electron momentum; conduction-band structure; dimensional confinement; dimensional reduction effect; first-principle Kohn-Sham orbitals; low-dimensional silicon nanostructures; momentum behavior; momentum state; nanoscale silicon materials; quantum-mechanical expectation; silicon(001) nanosheet; carrier electrons; dimensional confinement; first-principle calculation; nanoscale silicon; semiconductor;
Conference_Titel :
Innovative Engineering Systems (ICIES), 2012 First International Conference on
Conference_Location :
Alexandria
Print_ISBN :
978-1-4673-4440-1
DOI :
10.1109/ICIES.2012.6530848
