Fast Recovery Diode With Novel Local Lifetime Control

Author

Vobecký, J. ; Hazdra, P.

Author_Institution

Dept. of Microelectron., Czech Tech. Univ., Prague

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

A novel method for local lifetime control in fast recovery power diodes, low-temperature diffusion of palladium controlled by radiation defects, is presented. The principle is based on the decoration of radiation defects resulting from single energy alpha-particle irradiation by substitutional palladium. Experimental results show that this technique is capable to guarantee superior performance of 2.5kV/150A fast recovery diode, namely lower leakage current, better both thermal stability of defects and ruggedness under fast recovery compared to that of standard single energy alpha-particle irradiated diode

Keywords

alpha-particle effects; leakage currents; palladium; power semiconductor diodes; thermal stability; 150 A; 2.5 kV; alpha-particle irradiation; fast recovery power diodes; leakage current; local lifetime control; low-temperature diffusion; radiation defects; substitutional palladium; thermal stability; Aluminum; Annealing; Anodes; Cathodes; Helium; P-i-n diodes; Palladium; Silicides; Silicon; Voltage control; diffusion; fast power diode; ion irradiation; lifetime control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666090

Filename

1666090