Title :
Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization
Author :
Wang, Everett X. ; Giles, Martin D. ; Yu, Shia ; Leon, Francisco A. ; Hiroki, Akira ; Odanaka, Shinji
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
We present a high speed adaptive tetrahedral mesh refinement method based on the recursive multi-tree algorithm. To our knowledge, this is the first refinement algorithm that is able to improve the quality of the original mesh. In this paper, the method has been applied to discretize the Brillouin zone of silicon for full band Monte Carlo device simulation. Densities of states for seven electron and hole bands of silicon are computed based on the new refined tetrahedral meshes.
Keywords :
Brillouin zones; Monte Carlo methods; electronic density of states; elemental semiconductors; mesh generation; semiconductor device models; silicon; trees (mathematics); 3D adaptive tetrahedral mesh refinement; Brillouin zone discretization; Si; density of states; electron band; full band Monte Carlo device simulation; hole band; recursive multi-tree algorithm; silicon; Acceleration; Charge carrier processes; Computational modeling; Degradation; Educational institutions; Mesh generation; Monte Carlo methods; Numerical stability; Refining; Silicon;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865277
