DocumentCode
2367887
Title
The RF power amplifier using current source circuit
Author
Baek, Ju Won ; Kim, Jong Hyun ; Ryu, Myung Hyo ; Min, Byung Duk ; Kim, Jong Soo
Author_Institution
Korea Electrotechnol. Res. Inst., Changwon
fYear
2006
fDate
6-10 Nov. 2006
Firstpage
2850
Lastpage
2854
Abstract
This paper presents the improved current-fed RF power source which is used as a part of the plasma generator at the power semiconductor manufacturing facility. In this application, RF source operates at several MHz, therefore, it needs a very precise switching operation. The switch malfunction caused by current distortion with load variation results in system damage. To avoid this problem, current source or Z source scheme combined with power circuit is presented. Current source and Z source circuit limits the fast current rise during switch short-through or load short. At the same time, the proposed circuit removes the demerits of the current source such as the protection at no load condition. Therefore, protection and power control of the proposed circuits are easier than of the conventional voltage fed source. Moreover, the device utilization is maximized because dead time can be minimized
Keywords
distortion; plasma devices; power amplifiers; power convertors; power semiconductor devices; radiofrequency amplifiers; semiconductor device manufacture; RF power amplifier; Z source circuit; current distortion; current source circuit; current-fed RF power source; load variation; plasma generator; power control; power semiconductor manufacturing facility; Circuits; Plasma applications; Plasma materials processing; Plasma sources; Power amplifiers; Power generation; Power semiconductor switches; Protection; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
Conference_Location
Paris
ISSN
1553-572X
Print_ISBN
1-4244-0390-1
Type
conf
DOI
10.1109/IECON.2006.347251
Filename
4153193
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