The influence of orientation and strain on the transport properties of SOI trigate nMOSFETs

In this work, the behavior of strained triple-gate devices with arbitrary channel orientation is studied in terms of electron density as well as transport properties. We show that they can be improved for orientations different from the usual h100i, i.e., combining channel orientation and strain, these devices could double the electron mobility of standard CMOS devices for the same inversion charge concentration. This study should have an important impact from the technological point of view since it could allow the enhancement of mobility in CMOS structures with pMOSFETs and nMOSFETs with the same crystallographic orientation.