The influence of orientation and strain on the transport properties of SOI trigate nMOSFETs

Author

Tienda-Luna, I.M. ; Ruiz, F.G. ; Godoy, A. ; Gámiz, F.

Author_Institution

Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

319

Lastpage

322

Abstract

In this work, the behavior of strained triple-gate devices with arbitrary channel orientation is studied in terms of electron density as well as transport properties. We show that they can be improved for orientations different from the usual h100i, i.e., combining channel orientation and strain, these devices could double the electron mobility of standard CMOS devices for the same inversion charge concentration. This study should have an important impact from the technological point of view since it could allow the enhancement of mobility in CMOS structures with pMOSFETs and nMOSFETs with the same crystallographic orientation.

Keywords

MOSFET; crystal orientation; electron mobility; semiconductor device models; silicon-on-insulator; SOI trigate nMOSFET; Si; channel orientation; electron density; electron mobility; electron transport; strain; CMOS technology; Capacitive sensors; Crystallography; Effective mass; Electron mobility; MOSFETs; Schrodinger equation; Silicon on insulator technology; Transistors; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331826

Filename

5331826