High Current Gain Silicon Carbide Bipolar Power Transistors

Author

Domeij, Martin ; Lee, Hyung-Seok ; Zetterling, Carl-Mikael ; Östling, Mikael ; Schöner, Adolf

Author_Institution

KTH R. Inst. of Technol., Stockholm

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BV_CEO=1100 V. A reduction of the current gain was observed after contact annealing at 950 degC and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter doping around 1middot10 cm¹⁹. Resistive turn-off measurements were performed and a minimum collector-emitter voltage (V_CE) rise-time of 40 ns was found. The V_CE rise-time showed a clear dependence on the on-state base current thus indicating a significant stored charge

Keywords

annealing; p-n junctions; power bipolar transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor doping; silicon compounds; wide band gap semiconductors; 1100 V; 40 ns; 950 C; NPN bipolar junction transistors; contact annealing; current gain; emitter doping; oxide passivation; silicon carbide; Doping; Epitaxial layers; MOSFETs; Nitrogen; Performance evaluation; Performance gain; Power transistors; Silicon carbide; Substrates; Voltage; bandgap narrowing; bipolar junction transistor; current gain; silicon carbide; surface recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666091

Filename

1666091