Control of crystalline defects on wafers by using simulation in heat treating

We can realize the actual phenomena about thermal stress which occurs during heat treating and know the limitations which affect the occurrence of crystalline defects on semiconductor wafers by using simulation. Though there are still a lot of unknown factors which affect the crystalline defects, we can control and minimize the generation of defects more so than we did in the past. In fact the simulation will not give us everything but it will be a great help for developing equipment and lowering development cost.