DocumentCode
2367910
Title
Recent advances in understanding the bias temperature instability
Author
Grasser, T. ; Kaczer, B. ; Goes, W. ; Reisinger, H. ; Aichinger, Th ; Hehenberger, Ph ; Wagner, P.-J. ; Schanovsky, F. ; Franco, J. ; Roussel, Ph ; Nelhiebel, M.
Author_Institution
Christian Doppler Lab., Tech. Univ. Wien, Vienna, Austria
fYear
2010
fDate
6-8 Dec. 2010
Abstract
Our understanding of the bias temperature instability (BTI) has been plagued by disagreements related to measurement issues. Although even in the early papers on BTI the existence of recovery was acknowledged and discussed, for unknown reasons this had little impact on the way we used to think about the phenomenon until recently. Even after the re-discovery of recovery, it took a few years until it was fully appreciated that any measurement scheme conceived so far considerably interferes with the degradation it is supposed to measure, often accelerating its recovery. Nonetheless, this experimental nuisance has led researchers to think in more detail about the problem and has thus opened the floodgates for fresh ideas. Some of these ideas together with the experimental data supporting them are reviewed in the following.
Keywords
charge exchange; defect states; hole traps; semiconductor device measurement; bias temperature instability; semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703295
Filename
5703295
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