• DocumentCode
    2367910
  • Title

    Recent advances in understanding the bias temperature instability

  • Author

    Grasser, T. ; Kaczer, B. ; Goes, W. ; Reisinger, H. ; Aichinger, Th ; Hehenberger, Ph ; Wagner, P.-J. ; Schanovsky, F. ; Franco, J. ; Roussel, Ph ; Nelhiebel, M.

  • Author_Institution
    Christian Doppler Lab., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    Our understanding of the bias temperature instability (BTI) has been plagued by disagreements related to measurement issues. Although even in the early papers on BTI the existence of recovery was acknowledged and discussed, for unknown reasons this had little impact on the way we used to think about the phenomenon until recently. Even after the re-discovery of recovery, it took a few years until it was fully appreciated that any measurement scheme conceived so far considerably interferes with the degradation it is supposed to measure, often accelerating its recovery. Nonetheless, this experimental nuisance has led researchers to think in more detail about the problem and has thus opened the floodgates for fresh ideas. Some of these ideas together with the experimental data supporting them are reviewed in the following.
  • Keywords
    charge exchange; defect states; hole traps; semiconductor device measurement; bias temperature instability; semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703295
  • Filename
    5703295