• DocumentCode
    2367927
  • Title

    PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements

  • Author

    Garros, X. ; Brunet, L. ; Rafik, M. ; Coignus, J. ; Reimbold, G. ; Vincent, E. ; Bravaix, A. ; Boulanger, F.

  • Author_Institution
    CEA-Leti, Grenoble, France
  • fYear
    2010
  • fDate
    6-8 Dec. 2010
  • Abstract
    PBTI in La-doped HfSiON/TiN stacks is investigated using Ultra Fast IV measurements. Excellent PBTI lifetime of these oxides is demonstrated. We also show that PBTI is explained only by trapping in stress induced defects and not by trapping in pre-existing ones. Dependence on oxide field, temperature activation and recovery of PBTI are also investigated and modeled.
  • Keywords
    semiconductor device measurement; PBTI lifetime; ultra fast IV measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2010 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4424-7418-5
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2010.5703297
  • Filename
    5703297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2367927