Quantitative analysis of Si/Ge quantum structures by high-resolution transmission electron microscopy

Author

Zhao, C.W. ; Xing, Y.M. ; Yu, J.Z. ; Han, G.Q.

Author_Institution

Coll. of Sci., Inner Mongolia Univ. of Technol., Hohhot

fYear

2008

fDate

24-27 March 2008

Firstpage

659

Lastpage

663

Abstract

Quantitative high-resolution transmission electron microscopy was used to examine structural peculiarities of SiGe quantum islands on an atomic scale. A combination of high-resolution transmission electron microscopy and geometric phase analysis was applied to study the deformation fields of SiGe quantum islands grown on a Si(001) substrate by an ultrahigh vacuum chemical vapor deposition system. The numerical moire method was applied to visualize the lattice fringe surrounding the interface defects.

Keywords

Ge-Si alloys; chemical vapour deposition; deformation; interface structure; island structure; nanostructured materials; semiconductor growth; semiconductor thin films; silicon; transmission electron microscopy; vacuum deposition; Si; SiGe-Si; deformation fields; geometric phase analysis; high-resolution transmission electron microscopy; interface defects; lattice fringe; nanostructure semiconductor materials; numerical moire method; quantitative analysis; quantum islands; quantum structures; ultrahigh vacuum chemical vapor deposition system; Atomic layer deposition; Chemical analysis; Chemical vapor deposition; Elementary particle vacuum; Germanium silicon alloys; Lattices; Silicon germanium; Transmission electron microscopy; Vacuum systems; Visualization; Si/Ge quantum island; geometric phase analysis; high-resolution transmission electron microscopy; strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585572

Filename

4585572