DocumentCode
2367938
Title
Modeling CDM failures in high-voltage drain-extended ESD cells
Author
Hower, Phil ; Collins, Greg ; Chakraborty, Partha
Author_Institution
Texas Instrum., Manchester
fYear
2007
fDate
16-21 Sept. 2007
Abstract
Device simulation and physical modeling are used to explain the location and feature size of gate oxide defects seen post CDM testing. By comparing the model with defect measurements, a value for oxide breakdown voltage is obtained that is 1.6 times the DC value, a result that is also in agreement with device simulation. Finally, the model is used to suggest methods for improving CDM performance.
Keywords
electrostatic discharge; failure analysis; semiconductor device models; CDM failures; charged device model; defect measurements; device simulation; gate oxide defects; high-voltage drain-extended ESD cells; oxide breakdown voltage; physical modeling; Biological system modeling; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Testing; Time measurement; Transmission line measurements; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401733
Filename
4401733
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