Title :
Modeling CDM failures in high-voltage drain-extended ESD cells
Author :
Hower, Phil ; Collins, Greg ; Chakraborty, Partha
Author_Institution :
Texas Instrum., Manchester
Abstract :
Device simulation and physical modeling are used to explain the location and feature size of gate oxide defects seen post CDM testing. By comparing the model with defect measurements, a value for oxide breakdown voltage is obtained that is 1.6 times the DC value, a result that is also in agreement with device simulation. Finally, the model is used to suggest methods for improving CDM performance.
Keywords :
electrostatic discharge; failure analysis; semiconductor device models; CDM failures; charged device model; defect measurements; device simulation; gate oxide defects; high-voltage drain-extended ESD cells; oxide breakdown voltage; physical modeling; Biological system modeling; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Testing; Time measurement; Transmission line measurements; Voltage; Voltage-controlled oscillators;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401733
