Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy

Author

Daliento, S. ; Mele, L. ; Spirito, P. ; Gialanella, L. ; Romano, M. ; Limata, B.N. ; Carta, R. ; Bellemo, L.

Author_Institution

Dip. di Ingegneria Elettronica e delle Tlc, Universita di Napoli "Federico II"

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, a study of the effects on both lifetime and resistivity, induced by helium implantation processes, is presented. A wide range of implantation energies (from 3.5 MeV to 5.8 MeV) and doses (from 1middot10⁸ atm/cm² to 2middot10¹¹ atm/cm²) is considered and, for each of them, the resistivity profile and the lifetime profile are measured and compared with that of the unprocessed material. Moreover, the temperature dependence of that profile is analysed in the usual operation range of power devices. Results show that a high helium dose not only reduces the recombination lifetime but significatively affects the resistivity too. The temperature dependence of the two parameters is such that they play different roles at high or low temperature

Keywords

carrier lifetime; doping profiles; electrical resistivity; elemental semiconductors; helium; ion implantation; silicon; 3.5 to 5.8 MeV; helium implantation; implantation dose; lifetime profile; recombination lifetime; resistivity profile; Conductivity; Electronic mail; Helium; Lattices; Performance evaluation; Shape; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; defects; lifetime; resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666094

Filename

1666094