DocumentCode
2368002
Title
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
Author
Scholz, M. ; Thijs, S. ; Linten, D. ; Trémouilles, D. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Natarajan, M.I. ; Groeseneken, G.
Author_Institution
IMEC, Leuven
fYear
2007
fDate
16-21 Sept. 2007
Abstract
An improved calibration methodology for simultaneous capturing of voltage and current during an HBM pulse is presented. The capability of this new methodology for ESD protection device characterization and development is demonstrated using the quasi-static and transient response analysis of silicon-controlled rectifier devices.
Keywords
calibration; electrostatic discharge; semiconductor device measurement; thyristors; transient response; ESD protection device characterization; calibration mtuhodology; human body model; quasi-static device analysis; silicon-controlled rectifier devices; transient device analysis; wafer-level HBM measurements; Bandwidth; Current measurement; Current transformers; Electrostatic discharge; Probes; Pulse measurements; Stress measurement; Testing; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401736
Filename
4401736
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