Title :
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
Author :
Scholz, M. ; Thijs, S. ; Linten, D. ; Trémouilles, D. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Natarajan, M.I. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven
Abstract :
An improved calibration methodology for simultaneous capturing of voltage and current during an HBM pulse is presented. The capability of this new methodology for ESD protection device characterization and development is demonstrated using the quasi-static and transient response analysis of silicon-controlled rectifier devices.
Keywords :
calibration; electrostatic discharge; semiconductor device measurement; thyristors; transient response; ESD protection device characterization; calibration mtuhodology; human body model; quasi-static device analysis; silicon-controlled rectifier devices; transient device analysis; wafer-level HBM measurements; Bandwidth; Current measurement; Current transformers; Electrostatic discharge; Probes; Pulse measurements; Stress measurement; Testing; Transient analysis; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401736
