DocumentCode
2368037
Title
Dynamic Behavior of High-Power Diodes Analyzed by EBIC
Author
Pugatschow, A. ; Geinzer, T. ; Heiderhoff, R. ; Niedernostheide, F.-J. ; Schulze, H.-J. ; Wiedenhorst, B. ; Balk, L.J.
Author_Institution
Bergische Univ. Wuppertal
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
A setup is described which allows investigations of electric field distributions in the top layers of a dynamically driven power device by means of time-resolved electron beam induced currents (EBIC). Functionality of the field termination structures, e.g. guard rings can be visualized under transient bias conditions. Reverse and forward recovery of an 800-V diode was investigated by this technique and the obtained results were compared to EBIC-maps recorded on a statically biased device
Keywords
EBIC; power semiconductor diodes; 800 V; EBIC; electric field distributions; field termination structures; forward recovery; high-power diodes; reverse recovery; time-resolved electron beam induced currents; Bridge circuits; Electric variables measurement; Electron beams; Impedance; Phase measurement; Pulse measurements; Semiconductor diodes; Switching circuits; Visualization; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666095
Filename
1666095
Link To Document