• DocumentCode
    2368089
  • Title

    Theoretical investigation on structural, electronic and optical properties of Sb-doped ZnO

  • Author

    Zhang, F.H. ; Zhang, Z.Y. ; Zhang, W.H. ; Xue, S.Q. ; Yun, J.N. ; Yan, J.F.

  • Author_Institution
    Xi´´an Inst. of Opt. & Precision Mech., Acad. Sinica, Xi´´an
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    681
  • Lastpage
    685
  • Abstract
    The geometric structure, electronic structure, and the formation energy of impurities of Sb-doped ZnO with wurtzite structures have been investigated using a first-principles ultra-soft pseudo-potential approach of the plane wave based upon the density functional theory (DFT). The calculated results indicate that the volume of ZnO doped with sb add up, and the sb substitutional system of ZnO yields the lowest the formation energy of impurities. Furthermore, Sb dopant occupy the octahedral sites of wurtzte lattice behaves as a deep acceptor and shows p type degenerate semiconductor character. In addition, the DOS moves towards lower energy and the optical band gap is broadened It is also found that our results are in good agreement with other experimental results. The calculated results also enables more precise monitoring and controlling during the growth of ZnO p-type materials as possible.
  • Keywords
    II-VI semiconductors; antimony; density functional theory; photoluminescence; semiconductor doping; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO:Sb; antimony substitutional system; density functional theory; electronic properties; first-principles ultra-soft pseudopotential approach; optical band gap; optical properties; p type degenerate semiconductor character; p-type ZnO growth; structural properties; wurtzite lattice structure; Nanoelectronics; Zinc oxide; Zinc oxide; a first principles; density; doped; function theory(DFT);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585577
  • Filename
    4585577