DocumentCode
2368089
Title
Theoretical investigation on structural, electronic and optical properties of Sb-doped ZnO
Author
Zhang, F.H. ; Zhang, Z.Y. ; Zhang, W.H. ; Xue, S.Q. ; Yun, J.N. ; Yan, J.F.
Author_Institution
Xi´´an Inst. of Opt. & Precision Mech., Acad. Sinica, Xi´´an
fYear
2008
fDate
24-27 March 2008
Firstpage
681
Lastpage
685
Abstract
The geometric structure, electronic structure, and the formation energy of impurities of Sb-doped ZnO with wurtzite structures have been investigated using a first-principles ultra-soft pseudo-potential approach of the plane wave based upon the density functional theory (DFT). The calculated results indicate that the volume of ZnO doped with sb add up, and the sb substitutional system of ZnO yields the lowest the formation energy of impurities. Furthermore, Sb dopant occupy the octahedral sites of wurtzte lattice behaves as a deep acceptor and shows p type degenerate semiconductor character. In addition, the DOS moves towards lower energy and the optical band gap is broadened It is also found that our results are in good agreement with other experimental results. The calculated results also enables more precise monitoring and controlling during the growth of ZnO p-type materials as possible.
Keywords
II-VI semiconductors; antimony; density functional theory; photoluminescence; semiconductor doping; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO:Sb; antimony substitutional system; density functional theory; electronic properties; first-principles ultra-soft pseudopotential approach; optical band gap; optical properties; p type degenerate semiconductor character; p-type ZnO growth; structural properties; wurtzite lattice structure; Nanoelectronics; Zinc oxide; Zinc oxide; a first principles; density; doped; function theory(DFT);
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585577
Filename
4585577
Link To Document