High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity

Author

Seung-Chul Lee ; Jiyong Lim ; Min-Woo Ha ; Jin-Cherl Her ; Chong-Man Yun ; Min-Koo Han

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ.

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

The electrical characteristics of HEMT such as leakage current and breakdown voltage were improved considerably by oxidation of Ni/Au Schottky gate of HEMT. Leakage current was decreased from 4.2muA to 3.3nA and uniform high breakdown voltage of ~480V was obtained with floating gate. On-resistance was also decreased from 4.32mOmega-cm² to 3.89mOmega-cm² when oxidation time was 5min due to the improvement of the 2DEG which was increased from 7.82times10¹²/cm² to 9.61times10¹²/cm². Our experimental results show that oxidation of Ni/Au Schottky gate which is rather simple may be suitable for improvement of AlGaN/GaN HEMT

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; gold; leakage currents; nickel; oxidation; power HEMT; power MESFET; power semiconductor switches; semiconductor device breakdown; two-dimensional electron gas; 5 min; 500 C; AlGaN-GaN; HEMT switches; Ni-Au; Schottky gate; electrical characteristics; floating gate; high breakdown voltage; leakage current; Aluminum gallium nitride; Annealing; Degradation; Electric variables; Gallium nitride; Gold; HEMTs; Leakage current; Oxidation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666100

Filename

1666100