Title :
Three dimensional nonlinear viscoelastic oxidation modeling
Author :
Cea, Stephen ; Law, Mark
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
As device dimensions decrease, modeling of device isolation processes will have to be performed in three dimensions. The progression of the numerics from two dimensions to three dimensions has been eased because FLOOPS is an object oriented simulator. This paper discusses the implementation of the models for nonlinear stress dependent viscoelastic oxidation modeling. A two-step model is used for the growth of oxidation.
Keywords :
digital simulation; isolation technology; object-oriented methods; oxidation; semiconductor process modelling; FLOOPS; device isolation processes; nonlinear viscoelastic oxidation modeling; object oriented simulator; stress dependent modeling; three-dimensional models; two-step model; Birds; Deformable models; Elasticity; Electron devices; Nonlinear equations; Object oriented modeling; Oxidation; Shape; Stress; Viscosity;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865290
