Title :
Characterization and modeling of diodes in Sub-45 nm CMOS technologies under HBM stress conditions
Author :
Linten, D. ; Thijs, S. ; Scholz, M. ; Trémouilles, D. ; Sawada, M. ; Nakaei, T. ; Hasebe, T. ; Groeseneken, G.
Author_Institution :
IMEC vzw, Leuven
Abstract :
Diodes in a sub-45 nm CMOS technology, bulk and FinFET, are both investigated for their behavior under real-time ESD conditions. A new compact ESD diode model is developed and validated for HBM ESD transients. Forward recovery behavior during both TLP and HBM ESD stress is observed for FinFET diodes.
Keywords :
CMOS integrated circuits; diodes; electrostatic discharge; CMOS Technologies; ESD diode model; HBM stress conditions; forward recovery behavior; CMOS technology; Diodes; Doping; Electrostatic discharge; FinFETs; Protection; Qualifications; Semiconductor device modeling; Stress; Voltage;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401747
