DocumentCode
2368193
Title
Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels
Author
Biesemans, Serge ; De Meyer, Kristin
Author_Institution
ASP Div., IMEC, Leuven, Belgium
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
103
Lastpage
104
Abstract
This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations it is possible to find a mathematical condition which any local mobility model has to fulfil to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data.
Keywords
MOSFET; electron mobility; inversion layers; semiconductor device models; 2D device simulator; electron mobility; integral representations; inversion channels; modeling approach; transverse field dependent mobility; vertical electric field; Analytical models; Charge measurement; Current measurement; Electron mobility; Equations; Inspection; Mathematical model; Numerical models; Numerical simulation; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865295
Filename
865295
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