• DocumentCode
    2368193
  • Title

    Fundamental relation between local and effective transverse field dependent mobility for electrons in inversion channels

  • Author

    Biesemans, Serge ; De Meyer, Kristin

  • Author_Institution
    ASP Div., IMEC, Leuven, Belgium
  • fYear
    1996
  • fDate
    2-4 Sept. 1996
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    This paper describes a new modeling approach that relates the local mobility to the experimentally determined macroscopic or effective mobility as a function of the vertical electric field. Using the technique of integral representations it is possible to find a mathematical condition which any local mobility model has to fulfil to be in accordance with experiment. A local mobility model used in a 2D device simulator has to meet this requirement in order to achieve quantitative agreement between experimental and simulated data.
  • Keywords
    MOSFET; electron mobility; inversion layers; semiconductor device models; 2D device simulator; electron mobility; integral representations; inversion channels; modeling approach; transverse field dependent mobility; vertical electric field; Analytical models; Charge measurement; Current measurement; Electron mobility; Equations; Inspection; Mathematical model; Numerical models; Numerical simulation; Semiconductor devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
  • Print_ISBN
    0-7803-2745-4
  • Type

    conf

  • DOI
    10.1109/SISPAD.1996.865295
  • Filename
    865295