• DocumentCode
    2368208
  • Title

    Ab initio study of ferromagnetism in N doped ZnO and its stabilization by Li co-doping

  • Author

    Wu, Q.Y. ; Wu, R. ; Chen, Z.G. ; Lin, Y.B. ; Zhang, J.M. ; Huang, Z.G.

  • Author_Institution
    Dept. of Phys., Fujian Normal Univ., Fuzhou
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    700
  • Lastpage
    703
  • Abstract
    Spin-resolved electronic properties of N doped ZnO is investigated from ab initio calculations based on density functional theory (DFT). It is found that single N atom at O site in ZnO becomes spin polarized with its many neighboring atoms with a total magnetic moment of 1.0 muB. Band structure of ZnO doped with 6.25% of N shows a half metallic character with hole states in the minority channel. Though the ferromagnetic coupling is weak in the system, Li co-doping greatly enhance the ferromagnetism. The results of our calculations suggest the possibility of fabricating ZnO based DMS by (N, Li) co-doping.
  • Keywords
    II-VI semiconductors; ab initio calculations; band structure; density functional theory; electron spin polarisation; ferromagnetic materials; lithium; magnetic moments; nitrogen; semiconductor doping; semimagnetic semiconductors; weak ferromagnetism; wide band gap semiconductors; zinc compounds; DFT; DMS; ZnO:N,Li; ab initio calculations; band structure; density functional theory; diluted magnetic semiconductor; half metallic state; hole states; magnetic moment; minority channel; nitrogen-lithium codoping; spin polarization; spin-resolved electronic property; weak ferromagnetic coupling; Density functional theory; Electrons; Gallium nitride; Land surface temperature; Magnetic semiconductors; Magnetoelectronics; Polarization; Semiconductor impurities; Stationary state; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585581
  • Filename
    4585581