The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter

Author

Ji, In-Hwan ; Choi, Young-Hwan ; Kim, Soo-Seong ; Oh, Kwang-Hoon ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ.

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

We have proposed an optimization method of fault protection circuit, which uses the floating p-well voltage detection, of IGBT by employing a novel blanking filter. The floating p-well capacitor and gate resistor, which filter the false detection during the normal switching period, cause the pull-down MOSFET to lower the gate voltage of the IGBT softly. The experimental results show the soft-shutdown behavior of the IGBT with the optimized protection circuit during the fault condition. We have also investigated the switching characteristics by using the measurement and 2-dimensional numerical simulation

Keywords

MOSFET circuits; circuit optimisation; fault diagnosis; filters; insulated gate bipolar transistors; switching circuits; 2D numerical simulation; 600 V; PT-IGBT; blanking filter; circuit optimization method; false detection; floating p-well capacitor; floating p-well voltage detection; gate resistor; monolithic fault protection circuit; normal switching period; pull-down MOSFET; soft-shutdown behavior; Blanking; Capacitors; Circuit faults; Electrical fault detection; Fault detection; Filters; Insulated gate bipolar transistors; Optimization methods; Protection; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666103

Filename

1666103