Title :
Advanced composite high-κ gate stack for mixed anion arsenide-antimonide quantum well transistors
Author :
Ali, A. ; Madan, H. ; Misra, R. ; Hwang, E. ; Agrawal, A. ; Ramirez, I. ; Schiffer, P. ; Jackson, T.N. ; Mohney, S.E. ; Boos, J.B. ; Bennett, B.R. ; Geppert, I. ; Eizenberg, M. ; Datta, S.
Author_Institution :
Penn State Univ., University Park, PA, USA
Abstract :
This paper demonstrates the integration of a composite high-κ gate stack (3.3 nm Al2O3-1.0 nm GaSb) with a mixed anion InAs0.8Sb0.2 quantum-well field effect transistor (QWFET). The composite gate stack achieves; (i) EOT of 4.2 nm with <;10-7A/cm2 gate leakage (ii) low Dit interface (~1×1012 /cm2/eV) (iii) high drift μ of 3,900-5,060 cm2/V-s at NS of 5×1011-3×1012/cm2. The InAs0.8Sb0.2 MOS-QWFETs with composite gate stack exhibit extrinsic (intrinsic) gm of 334 (502) μS/μm and drive current of 380 μA/μm at VDS = 0.5V for Lg=1μm.
Keywords :
III-V semiconductors; MOSFET; alumina; gallium compounds; high-k dielectric thin films; indium compounds; quantum well devices; Al2O3-GaSb-InAs0.8Sb0.2; MOS-QWFET; composite high-κ gate stack; mixed anion arsenide-antimonide quantum well transistor; mixed anion quantum well field effect transistor; size 1 mum; size 1.0 nm; size 3.3 nm; voltage 0.5 V;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703308
