DocumentCode
2368236
Title
Double well field effect diode: Lateral SCR-like device for ESD protection of I/Os in deep sub micron SOI
Author
Salman, Akram A. ; Beebe, Stephen G. ; Pelella, Mario M.
Author_Institution
Adv. Micro Devices, Sunnyvale
fYear
2007
fDate
16-21 Sept. 2007
Abstract
The double well field effect diode (DWFED), an SOI SCR-like device for ESD protection of I/O circuits, is presented. The effect of device and process parameters on the diode on-voltage is examined, and the TLP and VFTLP characteristics of the DWFED are compared with those of the SOI lateral diode. It is shown how to use the DWFED for local clamping ESD protection, with a diode-like It2 level.
Keywords
electrostatic discharge; field effect devices; semiconductor diodes; silicon-on-insulator; thyristors; ESD protection; I/O circuits; SOI lateral diode; VFTLP; diode on-voltage; double well field effect diode; lateral SCR-like device; Anodes; Cathodes; Circuits; Clamps; Diodes; Electrostatic discharge; MOSFETs; Protection; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-136-5
Type
conf
DOI
10.1109/EOSESD.2007.4401750
Filename
4401750
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