Title :
Problems on the SRH Recombination Model and a Proposed Solution
Author_Institution :
Adv. Technol. R & D Center, Mitsubishi Electr. Corp., Amagasaki
Abstract :
It´s common that the present device simulator has a trouble to handle the life times in bipolar devices. However, the author could reproduce the JF-VF characteristics of some high speed pin diodes by including the radiative recombination. The simple SRH recombination model could not explain the JF-VF characteristics but also the JR-V R characteristics of pin diodes. Although the radiative recombination has been neglected in indirect semiconductors, the author would suggest the all types of recombination mechanisms, that are proportional to the carrier densities to the powered of one, two and three. And, the first one would contain a new powerful mechanism than the SRH´s
Keywords :
carrier density; electron-hole recombination; p-i-n diodes; semiconductor device models; SRH recombination model; bipolar devices; carrier densities; high speed pin diodes; radiative recombination; recombination mechanisms; Anodes; Cathodes; Cities and towns; Gold; Impurities; Platinum; Protons; Radiative recombination; Semiconductor diodes; Temperature dependence;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666104
