Problems on the SRH Recombination Model and a Proposed Solution

Author

Takata, Ikunori

Author_Institution

Adv. Technol. R & D Center, Mitsubishi Electr. Corp., Amagasaki

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

It´s common that the present device simulator has a trouble to handle the life times in bipolar devices. However, the author could reproduce the J_F-V_F characteristics of some high speed pin diodes by including the radiative recombination. The simple SRH recombination model could not explain the J_F-V_F characteristics but also the J_R-V _R characteristics of pin diodes. Although the radiative recombination has been neglected in indirect semiconductors, the author would suggest the all types of recombination mechanisms, that are proportional to the carrier densities to the powered of one, two and three. And, the first one would contain a new powerful mechanism than the SRH´s

Keywords

carrier density; electron-hole recombination; p-i-n diodes; semiconductor device models; SRH recombination model; bipolar devices; carrier densities; high speed pin diodes; radiative recombination; recombination mechanisms; Anodes; Cathodes; Cities and towns; Gold; Impurities; Platinum; Protons; Radiative recombination; Semiconductor diodes; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666104

Filename

1666104