Two-dimensional calibration of dopant transport models for submicron CMOS transistors

Author

Lau, F. ; Kupper, P. ; Gebhardt, K.H.

Author_Institution

Siemens AG, Munich, Germany

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

111

Lastpage

112

Abstract

In most cases complex process models for damage enhanced diffusion (DED) are calibrated from one-dimensional measurements (vertical SIMS or spreading resistance). MOS transistors in the submicron regime however are inherently two-dimensional devices. In this paper we analyse, whether a one-dimensional calibration of an advanced DED model is sufficient for a correct lateral subdiffusion of the source/drain dopants.

Keywords

MOSFET; calibration; diffusion; semiconductor device models; semiconductor doping; advanced DED model; complex process models; damage enhanced diffusion; dopant transport models; lateral subdiffusion; source/drain dopants; submicron CMOS transistors; submicron regime; two-dimensional calibration; Calibration; Doping; Electrical resistance measurement; Fluid flow measurement; Immune system; Implants; MOSFET circuits; Medical simulation; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865299

Filename

865299

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2368259