Title :
Two-dimensional calibration of dopant transport models for submicron CMOS transistors
Author :
Lau, F. ; Kupper, P. ; Gebhardt, K.H.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
In most cases complex process models for damage enhanced diffusion (DED) are calibrated from one-dimensional measurements (vertical SIMS or spreading resistance). MOS transistors in the submicron regime however are inherently two-dimensional devices. In this paper we analyse, whether a one-dimensional calibration of an advanced DED model is sufficient for a correct lateral subdiffusion of the source/drain dopants.
Keywords :
MOSFET; calibration; diffusion; semiconductor device models; semiconductor doping; advanced DED model; complex process models; damage enhanced diffusion; dopant transport models; lateral subdiffusion; source/drain dopants; submicron CMOS transistors; submicron regime; two-dimensional calibration; Calibration; Doping; Electrical resistance measurement; Fluid flow measurement; Immune system; Implants; MOSFET circuits; Medical simulation; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865299
