Advanced 100V, 0.13 gm BCD process for next generation automotive applications

Author

Wessels, Piet ; Swanenberg, Maarten ; Claes, Jan ; Ooms, Eric R.

Author_Institution

Process Dev. & Device Eng. & Characterisation, Ind. Centre Nijmegen

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

A-BCD is a family of advanced 100V BCD processes on SOI (van der Pol, 2000) offering improved robustness, superior EMC performance, extremely high packing density, high temperature operation and easy to design over bulk based technology. In this family a wide range of passive and active devices (up to 100V) are available. This paper describes the design of the latest generation of this family. HV devices on SOI are combined with a deep submicron based CMOS process. This enables the monolithic integration of microprocessors, flash memory, RAMs and ROMs together with power transistors. For automotive applications this monolithic approach guarantees the extremely high quality levels at an economical price level. Also other application areas, par example medical has benefit from this development

Keywords

CMOS integrated circuits; automotive electronics; silicon-on-insulator; 0.13 micron; 100 V; BCD process; HV devices; RAM; ROM; SOI; automotive applications; deep submicron based CMOS process; flash memory; microprocessors; monolithic integration; power transistors; Automotive applications; CMOS process; CMOS technology; Electromagnetic compatibility; Flash memory; Microprocessors; Monolithic integrated circuits; Read only memory; Robustness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666105

Filename

1666105