Title :
Advanced 100V, 0.13 gm BCD process for next generation automotive applications
Author :
Wessels, Piet ; Swanenberg, Maarten ; Claes, Jan ; Ooms, Eric R.
Author_Institution :
Process Dev. & Device Eng. & Characterisation, Ind. Centre Nijmegen
Abstract :
A-BCD is a family of advanced 100V BCD processes on SOI (van der Pol, 2000) offering improved robustness, superior EMC performance, extremely high packing density, high temperature operation and easy to design over bulk based technology. In this family a wide range of passive and active devices (up to 100V) are available. This paper describes the design of the latest generation of this family. HV devices on SOI are combined with a deep submicron based CMOS process. This enables the monolithic integration of microprocessors, flash memory, RAMs and ROMs together with power transistors. For automotive applications this monolithic approach guarantees the extremely high quality levels at an economical price level. Also other application areas, par example medical has benefit from this development
Keywords :
CMOS integrated circuits; automotive electronics; silicon-on-insulator; 0.13 micron; 100 V; BCD process; HV devices; RAM; ROM; SOI; automotive applications; deep submicron based CMOS process; flash memory; microprocessors; monolithic integration; power transistors; Automotive applications; CMOS process; CMOS technology; Electromagnetic compatibility; Flash memory; Microprocessors; Monolithic integrated circuits; Read only memory; Robustness; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666105
