Title :
Thermal stability issues in copper based metallization
Author :
Li, Jian ; Shacham-Diamond, Y. ; Mayer, J.W. ; Colgan, E.G.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
The thermally induced reactions in Cu/Si, Cu/metal, Cu/silicide and Cu/dielectric films have been studied by both Rutherford backscattering and Auger electron spectroscopy. Diffusion barrier layers (TiN, TiW, Ta, Cr and Co) have been tested in the Cu based metallization regime. Alloying Cu with other elements (Pd, Ti, Cr and Al) can significantly prevent Cu from oxidation. Methods to produce Cu thin films (e.g. electroless Cu) have been summarized
Keywords :
Auger effect; Rutherford backscattering; copper; copper alloys; integrated circuit technology; metallisation; stability; Auger electron spectroscopy; Co; Cr; Cu alloys; Cu thin films; Cu-Si; Cu/dielectric films; Cu/silicide films; Rutherford backscattering; Ta; TiN; TiW; diffusion barrier layers; electroless Cu; thermally induced reactions; thermally stability; Backscatter; Chromium; Copper; Dielectric films; Electrochemical impedance spectroscopy; Electrons; Metallization; Silicides; Thermal stability; Tin;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.152979
