Fault-injection algorithm for the error of the single-event upset and calculation for the error resistance by coated nanofilms

In this work, the R_T_S model based on simultaneous equations (R, T and S) and Catastrophe Theory is performed to describe the behavior of fault injection and the influence of fault injection on a system. The system was selected as a chip in a microelectronic device of a satellite, which is often failed to work by an error of the single-event upset (SEU). A fault-injection algorithm (FI_S) based on the S attribute of the model R_T_S is designed to analyze the errors in the attacked system. Based on silsesquioxane derive from hydrolytic condensation of [(gamma-glycidoxy)propyl]trimethoxysilane (GPMS), [(-methacryloxy)propyl]trimethoxysilane (MPMS) and (vinyl)trimethoxysilane (VMS), three nanofilm (f-GS, f-MS and f-VS) was coated on chips to protect from the fault. The equation expressing the relationship between the energy and the displacement of a charged particle was deduced. The total displacement where the higher energy was reduced by the inhibition of the nanofilm, can be calculated. As the result of the calculation, the f-VS coating has the best resistance to the SEU error because of its denser nanostructure.