DocumentCode
2368319
Title
Numerical simulations of surface states effects on GaAs power MESFETs
Author
Francis, Pascale ; Ohno, Yasuo ; Nogome, Masanobu ; Takahashi, Yuji
Author_Institution
Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
fYear
1996
fDate
2-4 Sept. 1996
Firstpage
117
Lastpage
118
Abstract
Summary form only given. The effects of surface states on the gate offset regions of GaAs power MESFETs are analyzed using a two-dimensional device simulator with a Shockley-Read-Hall statistics model for the surface states. Assuming electron trap type surface states and hole trap type surface states, it is found that the trap properties cause a large difference in DC performance and pulse operation of the FETs.
Keywords
III-V semiconductors; electron traps; gallium arsenide; hole traps; power MESFET; semiconductor device models; surface states; DC performance; GaAs; GaAs power MESFETs; Shockley-Read-Hall statistics model; electron trap type; gate offset regions; hole trap type; numerical simulations; pulse operation; surface states effects; two-dimensional device simulator; Analytical models; Electrodes; Electron traps; FETs; Gallium arsenide; Laboratories; MESFETs; Microelectronics; National electric code; Numerical simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN
0-7803-2745-4
Type
conf
DOI
10.1109/SISPAD.1996.865302
Filename
865302
Link To Document