Title :
ESD concerns in sawing wafers with discrete semiconductor devices
Author :
Yan, K.P. ; Gaertner, Reinhold ; Wong, C.Y. ; Ng, K.K.
Author_Institution :
Infineon Technol. (Malaysia), Melaka
Abstract :
Wafers with discrete semiconductor devices are sawn without CO2 bubbling. On one hand, there are claims that wafer sawing process using Dl-water without CO2 bubbling is not the state of the art process. On the other hand, there is a major blocking point for the introduction of CO2 bubbling in discrete devices wafer sawing process. Because discrete device wafers have as many as 300K chips on a single 6-inch wafer. Therefore the sawing process requires as long as 2.5 hours to process a wafer. The use of DI water in the sawing process results in severe corrosion issues. Investigations are conducted and the results are presented.semiconductor wafer sawing process
Keywords :
electrostatic discharge; sawing; semiconductor device manufacture; ESD concerns; discrete semiconductor devices; semiconductor wafer sawing process; Blades; Brushes; Cleaning; Conductivity; Corrosion; Electrostatic discharge; Grounding; Sawing machines; Semiconductor devices; Shafts;
Conference_Titel :
29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-136-5
DOI :
10.1109/EOSESD.2007.4401754