Title :
RF magnetron sputtered indium tin oxide thin films for application in solar cells
Author :
Chu, J.B. ; Zhu, H.B. ; Xu, X.B. ; Sun, Z. ; Chen, Y.W. ; Huang, S.M.
Author_Institution :
Eng. Res. Center for Nanophotonics & Adv. Instrum., East China Normal Univ., Shanghai
Abstract :
Indium tin oxide (ITO) films were deposited at room temperature with no oxygen flow on glass substrates by RF magnetron sputtering. The effects of sputtering power and argon ambient pressure were investigated. The morphology, structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy. The deposited ITO films with 300 nm thickness show a high transparency between 80 and 90% in the visible spectrum and 15Omega/square sheet resistance. The ITO films are suitable for application in CuInSe2 thin film solar cell as transparent conductive electrode layers.
Keywords :
X-ray diffraction; atomic force microscopy; electrical resistivity; electrodes; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputtered coatings; ultraviolet spectra; visible spectra; AFM; ITO; RF magnetron sputtering; UV-visible transmission spectroscopy; X-ray diffraction; XRD; atomic force microscopy; indium tin oxide thin films; optical properties; sheet resistance; solar cells; structural properties; temperature 293 K to 298 K; transparent conductive electrode layers; Atom optics; Atomic force microscopy; Conductive films; Indium tin oxide; Optical films; Optical microscopy; Photovoltaic cells; Radio frequency; Sputtering; Temperature; Indium tin oxide (ITO) films; room temperature; sputtering;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585588
