• DocumentCode
    2368347
  • Title

    RF magnetron sputtered indium tin oxide thin films for application in solar cells

  • Author

    Chu, J.B. ; Zhu, H.B. ; Xu, X.B. ; Sun, Z. ; Chen, Y.W. ; Huang, S.M.

  • Author_Institution
    Eng. Res. Center for Nanophotonics & Adv. Instrum., East China Normal Univ., Shanghai
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    728
  • Lastpage
    731
  • Abstract
    Indium tin oxide (ITO) films were deposited at room temperature with no oxygen flow on glass substrates by RF magnetron sputtering. The effects of sputtering power and argon ambient pressure were investigated. The morphology, structural and optical properties of ITO films were examined and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS transmission spectroscopy. The deposited ITO films with 300 nm thickness show a high transparency between 80 and 90% in the visible spectrum and 15Omega/square sheet resistance. The ITO films are suitable for application in CuInSe2 thin film solar cell as transparent conductive electrode layers.
  • Keywords
    X-ray diffraction; atomic force microscopy; electrical resistivity; electrodes; indium compounds; semiconductor materials; semiconductor thin films; solar cells; sputtered coatings; ultraviolet spectra; visible spectra; AFM; ITO; RF magnetron sputtering; UV-visible transmission spectroscopy; X-ray diffraction; XRD; atomic force microscopy; indium tin oxide thin films; optical properties; sheet resistance; solar cells; structural properties; temperature 293 K to 298 K; transparent conductive electrode layers; Atom optics; Atomic force microscopy; Conductive films; Indium tin oxide; Optical films; Optical microscopy; Photovoltaic cells; Radio frequency; Sputtering; Temperature; Indium tin oxide (ITO) films; room temperature; sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585588
  • Filename
    4585588