Simulation of isothermal current filament states in GaAs structures

Author

Vashchenko, A. ; Martynov, Y.B. ; Sinkevitch, V.F.

Author_Institution

SRI Pulsar, Moscow, Russia

fYear

1996

fDate

2-4 Sept. 1996

Firstpage

121

Lastpage

122

Abstract

Using 2-D numerical simulation the spatial instability and formation of stable spatial dissipate states (DS) are studied for breakdown of GaAs n-i-n (n-p-n) and Schottky M-i-n structures with long n-layer. It is revealed, that at some value of n-region length the DS is formed spontaneously like a multifilament periodic state. Spatial period of DS is of order of the n-region length and filament dimension of i-region length. Formation and evolution of the multifilament states in the n-i-n GaAs structure corresponds to the experimental data for MESFET and HEMT breakdown in pulse regime.

Keywords

III-V semiconductors; Schottky barriers; electric breakdown; gallium arsenide; semiconductor junctions; 2D numerical simulation; GaAs; Schottky M-i-n structure; breakdown; dissipate states; isothermal current filament states; multifilament states; n-i-n structure; n-p-n structure; spatial instability; Conductivity; Electric breakdown; Gallium arsenide; HEMTs; Isothermal processes; Kinetic theory; MESFETs; Numerical simulation; Physics; Semiconductor device breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Print_ISBN

0-7803-2745-4

Type

conf

DOI

10.1109/SISPAD.1996.865304

Filename

865304