Preventing arcing damage on radio frequency device wafer by controlling ESD resistivity level of water for saw and wash

Author

Dela Cruz, W.A. ; Marcelo, M.L.D. ; Borlongan, M.A.B.

Author_Institution

Intel Technol., Inc., Cavite

fYear

2007

fDate

16-21 Sept. 2007

Abstract

The current electrostatic discharge (ESD) resistivity limit of water during the wafer saw and wash process is found to induce polyimide tribocharging. Accumulated static energy discharges on metal 6 of the Radio Frequency (RF) device, in the form of electrical arcs, cause dielectric passivation layer breakdown and Electrical Overstress (EOS). To solve this problem, an experiment is done to determine the most efficient ESD resistivity level of water for arcing damage prevention.

Keywords

arcs (electric); electrical resistivity; electrostatic discharge; integrated circuit manufacture; radiofrequency integrated circuits; triboelectricity; ESD resistivity level of water; arcing damage prevention; dielectric passivation layer breakdown; electrical overstress; electrostatic discharge; polyimide tribocharging; radio frequency device wafer; static energy discharges; wafer saw; wash process; Conductivity; Dielectric breakdown; Dielectric devices; Earth Observing System; Electric breakdown; Electrostatic discharge; Passivation; Polyimides; Radio control; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

29th Electrical Overstress/Electrostatic Discharge Symposium, 2007. EOS/ESD

Conference_Location

Anaheim, CA

Print_ISBN

978-1-58537-136-5

Type

conf

DOI

10.1109/EOSESD.2007.4401755

Filename

4401755