Title :
High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film
Author :
Naito, Y. ; Helin, P. ; Nakamura, K. ; De Coster, J. ; Guo, B. ; Haspeslagh, L. ; Onishi, K. ; Tilmans, H.A.C.
Author_Institution :
Adv. Devices Dev. Center, Panasonic Corp., Kadoma, Japan
Abstract :
This paper reports on an SOI-based 20 MHz MEMS torsional resonator, wafer-level packaged using SiGe thin film and hermetically sealed using Al sputtering at 1Pa. The packaged resonators display a high quality factor (220,000) and a low motional resistance (12 k Ω) for low DC bias (1 V). The quality factor remains above 100,000 and the temperature coefficient of frequency (TCf) was measured to be -25ppm/°C and linear over the temperature range of -40 to +140 °C. Successful operation of a CMOS-based oscillator using the MEMS torsional resonator as the frequency determining element was demonstrated.
Keywords :
CMOS integrated circuits; Ge-Si alloys; Q-factor; aluminium; encapsulation; microcavities; micromechanical resonators; oscillators; seals (stoppers); semiconductor thin films; silicon-on-insulator; sputtering; wafer level packaging; Al; Al sputtering; CMOS based oscillator; MEMS torsional resonator; SOI; Si triangular beam resonators; SiGe; encapsulation; frequency 20 MHz; hermetic sealing; high-Q torsional mode; packaged resonators display; pressure 1 Pa; quality factor; resistance 12 kohm; semiconductor thin films; temperature -40 degC to 140 degC; voltage 1 V; wafer-level packaging;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703313
