• DocumentCode
    2368392
  • Title

    Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter

  • Author

    Chimento, F. ; Musumeci, S. ; Raciti, A. ; Melito, M. ; Sorrentino, G.

  • Author_Institution
    DIEES-ARIEL, Catania Univ.
  • fYear
    2006
  • fDate
    6-10 Nov. 2006
  • Firstpage
    2067
  • Lastpage
    2072
  • Abstract
    This paper deals with the use of the last generation of super-junction (SJ) power MOSFET devices together with silicon carbide (SiC) Schottky diodes in an actual converter application. The main technological issues on the used devices are described and discussed. The impact of the particular features of the devices are analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. The switching transients have been carried out looking for actual applications, and the advantages of the devices are discussed in terms of energy saving and performance improvement. Moreover a comparison between the proposed solution and a traditional one, with reference to the electrical characteristics and the switching performances in a continuous mode 200 W PFC converter, has been carried out. Furthermore some considerations have been presented on the obtainable efficiency improvement of the converter by using the two proposed devices
  • Keywords
    DC-DC power convertors; Schottky diodes; power MOSFET; power factor correction; silicon compounds; switching convertors; wide band gap semiconductors; 200 W; DC-DC boost converter; PFC converter; SiC; SiC diode application; energy saving; power MOSFET devices; power factor corrector; silicon carbide Schottky diodes; superjunction MOSFET; switching transients; DC-DC power converters; Electronic mail; MOSFET circuits; Power MOSFET; Power generation; Reactive power; Schottky diodes; Silicon carbide; Switches; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
  • Conference_Location
    Paris
  • ISSN
    1553-572X
  • Print_ISBN
    1-4244-0390-1
  • Type

    conf

  • DOI
    10.1109/IECON.2006.347307
  • Filename
    4153218