Title :
Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter
Author :
Chimento, F. ; Musumeci, S. ; Raciti, A. ; Melito, M. ; Sorrentino, G.
Author_Institution :
DIEES-ARIEL, Catania Univ.
Abstract :
This paper deals with the use of the last generation of super-junction (SJ) power MOSFET devices together with silicon carbide (SiC) Schottky diodes in an actual converter application. The main technological issues on the used devices are described and discussed. The impact of the particular features of the devices are analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. The switching transients have been carried out looking for actual applications, and the advantages of the devices are discussed in terms of energy saving and performance improvement. Moreover a comparison between the proposed solution and a traditional one, with reference to the electrical characteristics and the switching performances in a continuous mode 200 W PFC converter, has been carried out. Furthermore some considerations have been presented on the obtainable efficiency improvement of the converter by using the two proposed devices
Keywords :
DC-DC power convertors; Schottky diodes; power MOSFET; power factor correction; silicon compounds; switching convertors; wide band gap semiconductors; 200 W; DC-DC boost converter; PFC converter; SiC; SiC diode application; energy saving; power MOSFET devices; power factor corrector; silicon carbide Schottky diodes; superjunction MOSFET; switching transients; DC-DC power converters; Electronic mail; MOSFET circuits; Power MOSFET; Power generation; Reactive power; Schottky diodes; Silicon carbide; Switches; Switching converters;
Conference_Titel :
IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on
Conference_Location :
Paris
Print_ISBN :
1-4244-0390-1
DOI :
10.1109/IECON.2006.347307
