DocumentCode :
2368418
Title :
Automatic adaptive meshing for efficient electrostatic boundary element simulations
Author :
Bächtold, M. ; Korvink, J.G. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear :
1996
fDate :
2-4 Sept. 1996
Firstpage :
127
Lastpage :
128
Abstract :
The boundary element method (BEM) is well suited for the electrostatic analysis of large, geometrically complex structures. When highly accurate solutions are required, the discretization (meshing) of the geometry becomes increasingly important. A scheme is required to construct optimal meshes, in the sense that maximum accuracy of the solution can be achieved with minimal computational effort. Automatic adaptive meshing allows to automatically generate a good mesh, by iteratively refining the elements that contribute strongly to the overall error. An error indicator for BEM simulations is presented and an adaptive meshing scheme, involving both p- and h-type refinement. The generated discretizations lead to significantly higher accuracy for a given simulation size.
Keywords :
boundary-elements methods; electrostatics; mesh generation; BEM simulation; automatic adaptive meshing; boundary element method; discretization; electrostatic analysis; error indicator; Analytical models; Computational modeling; Electric potential; Electrostatic analysis; Geometry; Integral equations; Interpolation; Laboratories; Micromechanical devices; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
Type :
conf
DOI :
10.1109/SISPAD.1996.865307
Filename :
865307
Link To Document :
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