Title :
Electrochemic growth of CuInSe2 thin film on ITO/soda-lime glass from acidic medium
Author :
Yao, N.J. ; Huang, S.M. ; Pan, L.K. ; Sun, Z. ; Chen, Y.W.
Author_Institution :
Dept. of Phys., East China Normal Univ., Shanghai
Abstract :
The simultaneous electrodeposition of the Cu-In-Se system was investigated. The study was carried out at pH 1.8 using sodium citrate as complexing agent for the Cu2+ ion. The synthesis of CuInSe2 semiconductor thin film was carried out by electrodeposition on indium-tin oxide (ITO) /soda-lime glass. The simultaneous composition of the Cu, In, and Se was achieved by constant potential electrolysis technique in aqueous solutions containing CuCl2, InCl3, and H2SeO3. The as-deposited and annealed films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy. Homogeneous films were deposited with a well-defined composition and chalcopyrite structure. The crystallinity of the films was improved by annealing. The deposited stoichiometric CuInSe2 layers were about 2 mum in thickness. The annealed film is with a perfect crystallized and single chalcopyrite structure. It is suitable for photovoltaic applications.
Keywords :
Raman spectra; X-ray chemical analysis; X-ray diffraction; annealing; copper compounds; electrodeposition; electrolysis; indium compounds; scanning electron microscopy; semiconductor thin films; stoichiometry; ternary semiconductors; CuInSe2-InO; EDX; InO; Raman spectroscopy; SEM; X-ray diffraction; XRD; acidic medium; annealing; aqueous solutions; as-deposited films; chalcopyrite structure; composition structure; constant potential electrolysis technique; electrochemic growth; electrodeposition; energy dispersive X-ray spectroscopy; film crystallinity; homogeneous films; photovoltaic application; scanning electron microscopy; semiconductor thin film; size 2 mum; sodium citrate as complexing agent; stoichiometric layers; Annealing; Crystallization; Dispersion; Electrochemical processes; Glass; Indium tin oxide; Raman scattering; Scanning electron microscopy; Semiconductor thin films; Spectroscopy; Chalcopyrite; CuInSe2 (CIS); Electrodeposition; ITO; Raman spectroscopy; sodium nitrate;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585593