DocumentCode
2368559
Title
A surface-potential based model for GaN HEMTs in RF power amplifier applications
Author
John, D.L. ; Allerstam, F. ; Rödle, T. ; Murad, S.K. ; Smit, G.D.J.
Author_Institution
Central Res., NXP Semicond., Eindhoven, Netherlands
fYear
2010
fDate
6-8 Dec. 2010
Abstract
We present the first surface-potential based compact model for RF GaN HEMTs and benchmark our work against both numerical simulations and device measurements. It is expected that such an approach will be superior to other modeling techniques in terms of scalability and model performance for applications where accurate distortion modeling is of paramount importance.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; wide band gap semiconductors; GaN; HEMT; RF power amplifier; device measurements; model performance; surface-potential compact model;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4424-7418-5
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2010.5703321
Filename
5703321
Link To Document