Title :
A surface-potential based model for GaN HEMTs in RF power amplifier applications
Author :
John, D.L. ; Allerstam, F. ; Rödle, T. ; Murad, S.K. ; Smit, G.D.J.
Author_Institution :
Central Res., NXP Semicond., Eindhoven, Netherlands
Abstract :
We present the first surface-potential based compact model for RF GaN HEMTs and benchmark our work against both numerical simulations and device measurements. It is expected that such an approach will be superior to other modeling techniques in terms of scalability and model performance for applications where accurate distortion modeling is of paramount importance.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; radiofrequency amplifiers; semiconductor device models; wide band gap semiconductors; GaN; HEMT; RF power amplifier; device measurements; model performance; surface-potential compact model;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703321
