Title :
FinFET compact modelling for analogue and RF applications
Author :
Scholten, A.J. ; Smit, G.D.J. ; Pijper, R.M.T. ; Tiemeijer, L.F. ; Mercha, A. ; Klaassen, D.B.M.
Author_Institution :
TSMC Res. Centre, NXP, Eindhoven, Netherlands
Abstract :
A new, compact expression for the effective FinFET gate resistance is derived and validated on experimental data. Moreover, FinFET thermal noise measurements are presented and analyzed. We show that the observed increase of drain current noise with drain-source voltage is not due to microscopic excess noise, but to the access resistances, which modify the transfer of channel thermal noise to the terminals.
Keywords :
MOSFET; analogue circuits; millimetre wave field effect transistors; noise measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; FinFET compact modelling; FinFET thermal noise measurements; channel thermal noise; drain current noise; drain-source voltage; effective FinFET gate resistance; microscopic excess noise;
Conference_Titel :
Electron Devices Meeting (IEDM), 2010 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4424-7418-5
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2010.5703322
