Fast transient infrared thermal analysis of smart Power MOSFETS in permanent short circuit operation

Author

Breglio, Giovanni ; Irace, Andrea ; Spirito, Paolo ; Letor, Romeo ; Russo, Sebastiano

Author_Institution

Dipt. di Ingegneria Elettronica e delle Telecomunicazioni, Naples Univ., Napoli

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Automotive smart power MOSFETs are submitted to very high power dissipation when they operate in short circuit conditions. The consequential fast temperature cycling stresses the device structure and challenges its reliability. A not conventional 2D thermal measurement method permitted the thermal analysis of extremely fast thermal transients. This made feasible the definition of new smart power design rules to reduce stressing temperature peaks so improving significantly their reliability

Keywords

automotive electronics; power MOSFET; semiconductor device reliability; thermal analysis; thermal variables measurement; automotive MOSFET; fast transient thermal analysis; infrared thermal analysis; short circuit operation; smart power MOSFET; Automotive engineering; Circuits; Fault tolerance; MOSFETs; Power dissipation; Protection; Space technology; Surges; Temperature; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666120

Filename

1666120