Title :
Fast transient infrared thermal analysis of smart Power MOSFETS in permanent short circuit operation
Author :
Breglio, Giovanni ; Irace, Andrea ; Spirito, Paolo ; Letor, Romeo ; Russo, Sebastiano
Author_Institution :
Dipt. di Ingegneria Elettronica e delle Telecomunicazioni, Naples Univ., Napoli
Abstract :
Automotive smart power MOSFETs are submitted to very high power dissipation when they operate in short circuit conditions. The consequential fast temperature cycling stresses the device structure and challenges its reliability. A not conventional 2D thermal measurement method permitted the thermal analysis of extremely fast thermal transients. This made feasible the definition of new smart power design rules to reduce stressing temperature peaks so improving significantly their reliability
Keywords :
automotive electronics; power MOSFET; semiconductor device reliability; thermal analysis; thermal variables measurement; automotive MOSFET; fast transient thermal analysis; infrared thermal analysis; short circuit operation; smart power MOSFET; Automotive engineering; Circuits; Fault tolerance; MOSFETs; Power dissipation; Protection; Space technology; Surges; Temperature; Transient analysis;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666120
